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Spectral Ellipsometry of Cobalt-Ions Implanted Silicon Surface

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Abstract:

Monocrystalline silicon wafers implanted by cobalt ions with energy of 40 keV at a fluence range from 6.6×1012 to 2.5×1017 Co+-ion/cm2 were investigated by optical spectroscopic ellipsometry. By comparison of experimental data with modeling it is shown that the ellipsometric measurements are accurate and reliable method for monitoring of a low-dose ion implantation process.

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Periodical:

Solid State Phenomena (Volumes 233-234)

Pages:

526-529

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.233-234.526

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Online since:

July 2015

Authors:

Valerii V. Bazarov*, V.F. Valeev, V.I. Nuzhdin, Yu.N. Osin, G.G. Gumarov, Andrey L. Stepanov

Keywords:

Implanted Silicon, Ion Implantation, Kerr Effect, Magnetic Layers, Spectral Ellipsometry

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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References

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