Effect of Annealing Temperature on Platinum/YSZ Thin Film Fabricated Using RF and DC Magnetron Sputtering

A.R. Nurhamizah; Zuhairi Ibrahim; Rosnita Muhammad; Yussof Wahab; Samsudi Sakrani

doi:10.4028/www.scientific.net/SSP.268.229

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HomeSolid State PhenomenaSolid State Phenomena Vol. 268Effect of Annealing Temperature on Platinum/YSZ...

Effect of Annealing Temperature on Platinum/YSZ Thin Film Fabricated Using RF and DC Magnetron Sputtering

Abstract:

This research aims to study the growth and the effect of annealing temperature on the structural properties of Platinum/YSZ/Platinum thin film. The thin films were prepared by RF and DC magnetron sputtering method utilized platinum as electrodes (anode and cathode) and YSZ as electrolyte. Two temperatures of annealing (400 and 600 °C) were conducted onto Platinum/YSZ/Platinum thin film for comparison in this study. Crystalline phase, microstructure and thickness of thin films were evaluated using X-Ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FE-SEM) technique. Results show that Pt/YSZ/Pt thin film without post-annealing gives a better morphology and crystal phase.

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Periodical:

Solid State Phenomena (Volume 268)

Pages:

229-233

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.268.229

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Online since:

October 2017

Authors:

A.R. Nurhamizah*, Zuhairi Ibrahim, Rosnita Muhammad, Yussof Wahab, Samsudi Sakrani

Keywords:

Direct Current (DC), Magnetron Sputtering, Platinum (Pt), Radio Frequency (RF), Solid Oxide Fuel Cell, Thin Film, Yttria Stabilized Zirconia (YSZ)

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