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HomeSolid State PhenomenaSolid State Phenomena Vol. 281Growth of Highly (110) Oriented Diamond Film by...

Growth of Highly (110) Oriented Diamond Film by Microwave Plasma Chemical Vapor Deposition

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Abstract:

In this study, we propose a simple and effective approach to enhance (110) orientation in diamond films grown on (100) Si substrates by microwave plasma chemical vapor deposition. It is found that the crystalline structure of diamond films strongly rely on the CH₄ concentration in the nucleation stage. Under the same growth condition, when the CH₄ concentration is less than 7% (7%) in the nucleation stage, the diamond films exhibit randomly oriented structure; once the value exceeds 7%, the deposited films are strongly (110) oriented. It could be verified by experiments that the formation of (110) orientation in diamond films are related to the high nucleation density and high fraction of diamond-like carbon existing in nucleation samples.

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High-Performance Ceramics X

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Solid State Phenomena (Volume 281)

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893-899

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https://doi.org/10.4028/www.scientific.net/SSP.281.893

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Online since:

August 2018

Authors:

Yi Fan Xi, Jian Huang*, Ke Tang, Xin Yu Zhou, Bing Ren, Lin Jun Wang

Keywords:

Chemical Vapor Deposition, Diamond, Orientation

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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