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HomeSolid State PhenomenaSolid State Phenomena Vols. 35-36Dislocations Multiplication in an Arsenic Doped...

Dislocations Multiplication in an Arsenic Doped Area Surrounded by a Trench

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Dislocations '93

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Periodical:

Solid State Phenomena (Volumes 35-36)

Pages:

485-490

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.35-36.485

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Online since:

September 1993

Authors:

B. Leroy, O. Cain

Keywords:

Dislocation Climb, Emitter Gilde, Ion Implantation, Silicon Stress, Trench

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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