Impurity Effects on the Dislocation Structure in GaAs

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Periodical:

Solid State Phenomena (Volumes 35-36)

Main Theme:

Edited by:

J. Rabier, A. George, Y. Bréchet and L. Kubin

Pages:

501-506

DOI:

10.4028/www.scientific.net/SSP.35-36.501

Citation:

P. Sitch et al., "Impurity Effects on the Dislocation Structure in GaAs", Solid State Phenomena, Vols. 35-36, pp. 501-506, 1993

Online since:

September 1993

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$35.00

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