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HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38Silicon Layers Grown by Liquid Phase Epitaxy on...

Silicon Layers Grown by Liquid Phase Epitaxy on Polycrystalline Silicon Substrates

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Abstract:

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Polycrystalline Semiconductors III

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Periodical:

Solid State Phenomena (Volumes 37-38)

Pages:

427-432

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38.427

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Cite this paper

Online since:

March 1994

Authors:

Günter Wagner, B. Steiner

Keywords:

Doping, Grain Boundary, Liquid Phase Epitaxy (LPE), Morpholoy, Polycrystalline

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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