Solid State Phenomena Vol. 377

Abstract: Our laboratory explores organic polymer materials, focusing on utilizing polyimide (PI) films [1] as the resistive switching layer in resistive random-access memory (ReRAM). This study investigates how UV-induced molecular changes in PI films lead to resistance transitions resembling electrical switching. Based on this characteristic, a novel resistive optoelectronic memory device has been developed and explores methods for tuning their energy gap (Eg) through process modifications. By analyzing the physical and electrical properties of the films, we evaluate their UV absorption efficiency and molecular structural transformations. The study identifies the optimal UV wavelength for operation and measures device programming efficiency and data retention. Finally, through process control to modulate the energy gap of PI films.

Abstract: A vacuum-assisted thermal evaporation method for the preparation of undoped and Zn-doped erbium sesquiselenide Er₂Se₃ thin films on various substrates using independent elementary sources is developed. The electrophysical parameters, such as electrical resistivity and thermo-electromotive force of the films, are measured from 77 up to 650 K.

Abstract: An innovative method of obtaining thin films of semiconductors and other materials, which is based on the differences in components solubility, density, and atomic mass, is developed. Process of producing a thin film of a substance A starts by choosing of another component – substance B that may form a two-component A–B solid solution. Then, it has to be selected third component – substance C that must dissolve substance B well, but A does not. The selection of the composition and conditions of application of the chemical etching process ensure the removal of C and B dissolved in it from the surface of A. The method provides both low- and high-temperature processes. The proposed new principle of obtaining thin films would be attractive due to their reduced size, tunable properties, proper adhesion, preservation of high reliability, possibility of further miniaturization in electronics, and cost reduction.

Abstract: This study considers the growth characteristics of nickel oxide NiO films using DC magnetron sputtering. The hysteresis transition process between sputtering from poisoned and clean Ni target as a function of discharge power was determined. The structure, atomic composition, and optical and electrical properties of NiO films for two modes of sputtering (with low and high discharge power, respectively) have been investigated. It is demonstrated that sputtering parameters have a fundamental effect on both the formation of structure and atomic composition and on the trend of their modification using temperature annealing. The results obtained for each of the sputtering modes can be applied to the development of devices based on catalytic reactions as well as on their semiconductor properties.