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HomeSolid State PhenomenaSolid State Phenomena Vol. 377Backgrounds of an Innovative Approach to Grow Thin...

Backgrounds of an Innovative Approach to Grow Thin Films: General Considerations

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Abstract:

An innovative method of obtaining thin films of semiconductors and other materials, which is based on the differences in components solubility, density, and atomic mass, is developed. Process of producing a thin film of a substance A starts by choosing of another component – substance B that may form a two-component A–B solid solution. Then, it has to be selected third component – substance C that must dissolve substance B well, but A does not. The selection of the composition and conditions of application of the chemical etching process ensure the removal of C and B dissolved in it from the surface of A. The method provides both low- and high-temperature processes. The proposed new principle of obtaining thin films would be attractive due to their reduced size, tunable properties, proper adhesion, preservation of high reliability, possibility of further miniaturization in electronics, and cost reduction.

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Periodical:

Solid State Phenomena (Volume 377)

Pages:

105-110

DOI:

https://doi.org/10.4028/p-39sW3q

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Online since:

October 2025

Authors:

Tengiz Qamushadze, Korneli Svanidze, Elza Khutsishvili*, Nana Kobulashvili

Keywords:

Etching, Microscale, Solid Solution, Substrate, Thin Films

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© 2025 Trans Tech Publications Ltd. All Rights Reserved

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