Role of Oxygen on Donor Formation in CZ-Silicon During 430-630 °C Heat Treatment

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Periodical:

Solid State Phenomena (Volume 55)

Edited by:

R.M. Mehra and P.C. Mathur

Pages:

123-130

DOI:

10.4028/www.scientific.net/SSP.55.123

Citation:

O. Prakash and S. Singh, "Role of Oxygen on Donor Formation in CZ-Silicon During 430-630 °C Heat Treatment", Solid State Phenomena, Vol. 55, pp. 123-130, 1997

Online since:

August 1997

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$35.00

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