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HomeSolid State PhenomenaSolid State Phenomena Vol. 55Role of Oxygen on Donor Formation in CZ-Silicon...

Role of Oxygen on Donor Formation in CZ-Silicon During 430-630 °C Heat Treatment

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Semiconductor Materials and Technology (ICSMT)

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Periodical:

Solid State Phenomena (Volume 55)

Pages:

123-130

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.55.123

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Online since:

August 1997

Authors:

O. Prakash, Sohan Singh

Keywords:

Activation Energy, Dimers, Kinetic, New Donors, Thermal Acceptor, Thermal Donor

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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