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HomeSolid State PhenomenaSolid State Phenomena Vol. 55Position of Dangling Bond States in Doped a-Si:H

Position of Dangling Bond States in Doped a-Si:H

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Semiconductor Materials and Technology (ICSMT)

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Periodical:

Solid State Phenomena (Volume 55)

Pages:

137-139

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.55.137

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Online since:

August 1997

Authors:

Ashwini K. Sinha, S.K. Tripathi, G.S. Narayana, S.C. Agarwal

Keywords:

a-Si:H, Constant Photocurrent Measurement, Density of States (DOS)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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