Paper Titles

Formation of Polycrystalline CuInS₂-Films by Plasma Sulphurization of Cu-In Bilayers in a Magnetron Discharge in an Ar/H₂S-Atmosphere
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Polycrystalline Bulk CuInSe₂ with a Deviation from Valence Stoichiometry
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Relation Between Photoconductivity and Deposition Conditions of Evaporated CuInSe₂ Polycrystalline Thin Films
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Microstructure of Cu-Rich CuGaSe₂ Thin Films
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Light-Induced Metastabilities in the Interface Region of Cu(In,Ga) Se₂-Based Photovoltaic Devices Studied by Laplace Transform Junction Spectroscopy
p.403

Air-Annealing Effects on Polycrystalline Cu(In,Ga)Se₂ Heterojunctions
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Photoelectrical Properties of In/p-(Cu,Ag)(In,Ga) (Se,Te)₂ Surface-Barrier Structures
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Polarization Photosensitivity of Polycrystalline-Film Cu(In,Ga)Se₂/CdS/ZnO Structures
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Photoluminescence Study of Cu(Ga_xIn_1-x)₃Se₅ and CuIn₃(S_xSe_1-x)₅ Crystals with 0≤x≤1
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HomeSolid State PhenomenaSolid State Phenomena Vols. 67-68Light-Induced Metastabilities in the Interface...

Light-Induced Metastabilities in the Interface Region of Cu(In,Ga) Se₂-Based Photovoltaic Devices Studied by Laplace Transform Junction Spectroscopy

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Polycrystalline Semiconductors V

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Periodical:

Solid State Phenomena (Volumes 67-68)

Pages:

403-408

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.67-68.403

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Online since:

April 1999

Authors:

P. Zabierowski, M. Igalson, H.-W. Schock

Keywords:

Deep Level Transient Spectroscopy, Interface States (or Traps), Photovoltaic Device, Tunneling

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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