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Online since: December 2012
Authors: Ramesh Chandra Agarwala, Vijaya Agarwala, Preeti Makkar
Bonding Mechanism of Electroless Metallic Coating
An attempt has been made for the very first time where Al–Si oxides ceramic powder has been coated with copper by EL technique and the bonding mechanism of EL copper coating with the substrate has been evaluated [20].
SEM micrographs of copper coated powders on Al–Si oxides ceramic are shown in Fig.4a,b.
Fig.5: XRD patterns obtained from (A) original uncoated ceramic Al–Si oxides powder and (B) EL copper coated ceramic powder [20].
The uniform EL coating thickness, under optical microscope on both sides of the Al substrate is shown in Fig.7b.
(a) (b) Fig.7: (a) SEM of EL Ni-P deposit on Al substrates (b) Transverse sectional view of coating on sides of substrate [9,14].
SEM micrographs of copper coated powders on Al–Si oxides ceramic are shown in Fig.4a,b.
Fig.5: XRD patterns obtained from (A) original uncoated ceramic Al–Si oxides powder and (B) EL copper coated ceramic powder [20].
The uniform EL coating thickness, under optical microscope on both sides of the Al substrate is shown in Fig.7b.
(a) (b) Fig.7: (a) SEM of EL Ni-P deposit on Al substrates (b) Transverse sectional view of coating on sides of substrate [9,14].
Online since: January 2015
Authors: Jian Xi Peng, Jian Xiong Tan
Moreover, increasing its kernel parameter values, the EL-SVDD algorithm is also more stable.
[6] Wu J, Xiong H, Wu P, et al.
[7] Juszczak P, Tax D, Pe E, et al.
[8] Sakla W, Chan A, Ji J, et al.
[12] XU Y, ZHANG D, YANG J. et al.
[6] Wu J, Xiong H, Wu P, et al.
[7] Juszczak P, Tax D, Pe E, et al.
[8] Sakla W, Chan A, Ji J, et al.
[12] XU Y, ZHANG D, YANG J. et al.
Online since: July 2011
Authors: Gao Yu Zhong, Pei Yuan Fang, Yong Ming Cao
One is the control device ITO\NPB (45nm)\Alq (65nm)\LiF\Al.
In the present case, the efficiency of device ITO\NPB\BCP (1 nm) \Alq\LiF\Al is 3.99 cd/A, ~48% higher than that of the device ITO\NPB\Alq\LiF\Al (2.7 cd/A).
Fig. 5: Normalized EL spectra of the OLEDs ITO\NPB(45)\BCP (x)\Alq (65-x)\LiF\Al, where x=0, 1, 2, …{TTP}8230 …{TTP}8230 , 11, and 65 nm.
Fig. 5 shows the normalized EL spectra of the OLEDs ITO\NPB\BCP (x)\Alq (65-x)\LiF\Al, where x=0, 1, 2, …{TTP}8230 …{TTP}8230 , 11, and 65 nm.
Namely, the EL of OLED ITO\NPB\BCP (11)\Alq (54)\LiF\Al contains two parts.
In the present case, the efficiency of device ITO\NPB\BCP (1 nm) \Alq\LiF\Al is 3.99 cd/A, ~48% higher than that of the device ITO\NPB\Alq\LiF\Al (2.7 cd/A).
Fig. 5: Normalized EL spectra of the OLEDs ITO\NPB(45)\BCP (x)\Alq (65-x)\LiF\Al, where x=0, 1, 2, …{TTP}8230 …{TTP}8230 , 11, and 65 nm.
Fig. 5 shows the normalized EL spectra of the OLEDs ITO\NPB\BCP (x)\Alq (65-x)\LiF\Al, where x=0, 1, 2, …{TTP}8230 …{TTP}8230 , 11, and 65 nm.
Namely, the EL of OLED ITO\NPB\BCP (11)\Alq (54)\LiF\Al contains two parts.
Online since: April 2005
Authors: Ramesh Chandra Agarwala
., IIT Roorkeee, 247667 (UA), India
ramesfmt@iitr.ernet.in
Keywords: Electroless coating, Nano -composite EL coating, Ag /Cu / Ni based EL coating
Abstract
Since the introduction of Electroless (EL) coating in 1946 by Brenner and Riddle, the process
has been the subject of steady growth.
Here the nano-sized ferrite particles are co-deposited along with the Ni-P EL coatings.
Experimental The EL technique involves the autocatalytic reduction, at the substrate/solution interface, of cations by EL bath released from suitable chemical reducing agents.
The major component of the EL technique is the 'bath'.
Singhal, "Stress corrosion study of electroless silver plated Al-3.8% wt Mg alloy", National seminar on Surface Engineering , The Institute of Engineers, Jaipur , 5-6 Sept.(1997)
Here the nano-sized ferrite particles are co-deposited along with the Ni-P EL coatings.
Experimental The EL technique involves the autocatalytic reduction, at the substrate/solution interface, of cations by EL bath released from suitable chemical reducing agents.
The major component of the EL technique is the 'bath'.
Singhal, "Stress corrosion study of electroless silver plated Al-3.8% wt Mg alloy", National seminar on Surface Engineering , The Institute of Engineers, Jaipur , 5-6 Sept.(1997)
Online since: November 2020
Authors: Alexander Boychenko, Dmitry Ovechenko
After that, for 800 s at the same voltage and temperature in the studied ketone, the luminosity kinetics of the EL of the oxidized Al-anode and the current density flowing in the electrolytic cell previously described in [12] were recorded.
This is especially evident in the deep cavities of the Al-anode.
Obviously, the absence of the EL film of the Al2O3 film formed on the Al-anode in Ac is due to its disordered structure.
In the last two electrolytes, this process is accompanied by EL. 2.
The absence of EL in Al2O3 formed on the Al anode in Ac was revealed, which is probably due to its layered, disordered, and easily destroyed structure.
This is especially evident in the deep cavities of the Al-anode.
Obviously, the absence of the EL film of the Al2O3 film formed on the Al-anode in Ac is due to its disordered structure.
In the last two electrolytes, this process is accompanied by EL. 2.
The absence of EL in Al2O3 formed on the Al anode in Ac was revealed, which is probably due to its layered, disordered, and easily destroyed structure.
Online since: March 2016
Authors: Ji Xiang Gao, Hai Jun Liu, Chuan Dong Ren, Jian Wei Niu, Lie Jun Li
And the optimal mechanical properties of Al-Si-Cu-Mg alloys were obtained under the content ratio of Cu/Mg within 4, where the UTS and El reached 426 MPa and 6.3% after T6 treated, respectively.
Fig.5 displays the corresponding results of tensile properties including ultimate tensile strength (UTS), yield strength (YS) and percentage elongation (El).
Moreover, the M1 alloy shows favorable plasticity, and the value of EL reaches as high as 10.72%.The Al2Cu phase in M3 alloy is more rigid as well as bigger size.
(2) The maximum strength and percentage elongation for Al-Si-Cu-Mg alloys can be obtained by the heat treatment, where the Cu/Mg ratio is 4, the UTS, YS and El of alloy can reach 426.2 MPa, 295.0MPa and 6.3%, respectively.
Abou El-khair, Microstructure characterization and tensile properties of squeeze-cast AlSiMg alloys, Materials Letters. 59(2005) 894-900
Fig.5 displays the corresponding results of tensile properties including ultimate tensile strength (UTS), yield strength (YS) and percentage elongation (El).
Moreover, the M1 alloy shows favorable plasticity, and the value of EL reaches as high as 10.72%.The Al2Cu phase in M3 alloy is more rigid as well as bigger size.
(2) The maximum strength and percentage elongation for Al-Si-Cu-Mg alloys can be obtained by the heat treatment, where the Cu/Mg ratio is 4, the UTS, YS and El of alloy can reach 426.2 MPa, 295.0MPa and 6.3%, respectively.
Abou El-khair, Microstructure characterization and tensile properties of squeeze-cast AlSiMg alloys, Materials Letters. 59(2005) 894-900
High-Efficient Non-Doped Type White Organic Light-Emitting Devices Using an Electron/Exciton Blocker
Online since: January 2005
Authors: Wenfa Xie, Shi Yong Liu
China
a
xiewenfa@mail.edu.cn,
b
syliu@mail.jlu.edu.cn
Keywords: organic electroluminescent devices, white, non-doped type
Abstract: Non-doped type white organic electroluminescent (EL) devices have the following
structure ITO/m-MTDATA (30nm) /NPB (20-dnm) /rubrene (0.1nm) /NPB (dnm) /DPVBi (20nm)
/TPBi (20nm) /Alq (10nm) /LiF/Al were fabricated.
A bilayer of lithium fluoride (LiF) and aluminum (Al) was used for the efficient cathode [10].
The LiF/Al Alq3 (10 nm) TPBi (20 nm) DPVBi (20 nm) NPB (d nm) rubrene (0.1 nm) NPB (20-d nm) m-MTDATA (30 nm) ITO glass structure is indium tin oxide (ITO)/m-MTDATA (30 nm)/NPB (20-d nm)/rubrene (1 Å)/NPB (d nm)/DPVBi (20 nm)/TPBi (20 nm)Alq3 (10 nm)/LiF/Al, where d=1, 3, 5 or 7 nm, and the corresponding devices are named as Devices A-D, respectively.
There is a little change of the EL spectra with the changing of the voltage.
EL spectra of the device B under difference bias voltage.
A bilayer of lithium fluoride (LiF) and aluminum (Al) was used for the efficient cathode [10].
The LiF/Al Alq3 (10 nm) TPBi (20 nm) DPVBi (20 nm) NPB (d nm) rubrene (0.1 nm) NPB (20-d nm) m-MTDATA (30 nm) ITO glass structure is indium tin oxide (ITO)/m-MTDATA (30 nm)/NPB (20-d nm)/rubrene (1 Å)/NPB (d nm)/DPVBi (20 nm)/TPBi (20 nm)Alq3 (10 nm)/LiF/Al, where d=1, 3, 5 or 7 nm, and the corresponding devices are named as Devices A-D, respectively.
There is a little change of the EL spectra with the changing of the voltage.
EL spectra of the device B under difference bias voltage.
Online since: March 2006
Authors: Nam Hee Cho, Jae Hyun Shim
A prototype of ITO/nc-Si:H/P-type Si wafer/Al EL
devices was illustrated with its fundamental electrical and optical features.
The EL device produced EL spectra with their maximum intensity at ~ 525 nm which are similar to the PL spectra.
I-V Characteristics Fig. 4 shows the I-V characteristic curves of the ITO/nc-Si:H/p-type Si wafer/Al contacts.
EL spectrum of the ITO/PS/p-type Si/Al devices; the nc-Si:H film was annealed at 1100 ℃.
A prototype of ITO/nc-Si:H/P-type Si/Al EL devices was illustrated with its fundamental electrical and optical features.
The EL device produced EL spectra with their maximum intensity at ~ 525 nm which are similar to the PL spectra.
I-V Characteristics Fig. 4 shows the I-V characteristic curves of the ITO/nc-Si:H/p-type Si wafer/Al contacts.
EL spectrum of the ITO/PS/p-type Si/Al devices; the nc-Si:H film was annealed at 1100 ℃.
A prototype of ITO/nc-Si:H/P-type Si/Al EL devices was illustrated with its fundamental electrical and optical features.
Online since: May 2012
Authors: Li Ying Zhang, Bin Li, Gang Lv
EL Properties.
Tse and et al: Opt.
Mszumdar and et al: Nature. 2001 409: 494 [5].
Liang and et al: J Mater Chem. 11 (2001) 2615-2619
Zhu and et.al: Synthetic.
Tse and et al: Opt.
Mszumdar and et al: Nature. 2001 409: 494 [5].
Liang and et al: J Mater Chem. 11 (2001) 2615-2619
Zhu and et.al: Synthetic.
Online since: April 2009
Authors: Ramesh Chandra Agarwala, Vijaya Agarwala, Rahul Sharma
Wadhawan et al. [3] reported the
unpurified single-wall carbon nanotube (CNT) with impurities of magnetic Fe nanoparticles, with
the greater microwave absorption properties affected by the cooperative effect.
Che et al. [2] also reported that the magnetic-nanoparticle/CNT composites exhibited improved microwave absorption properties, which are attributed to the better match between the dielectric loss and the magnetic loss.
EL (�i-P)/�RAM �anocomposite Bath.
Fig. 2: FESEM micrographs of 'as-synthesized' and MWA powders (a) NRAM (b) EL NiP/NRAM and (c) EL Ni-P nano globules, MWA EL Ni-P/NRAM at (d) 160 watt (e) 760 watt.
Figure 4 (a-d) shows the static and dynamic EM properties of 'as-synthesized' EL Ni-P nano globules, EL Ni-P/NRAM nanocomposite sample.
Che et al. [2] also reported that the magnetic-nanoparticle/CNT composites exhibited improved microwave absorption properties, which are attributed to the better match between the dielectric loss and the magnetic loss.
EL (�i-P)/�RAM �anocomposite Bath.
Fig. 2: FESEM micrographs of 'as-synthesized' and MWA powders (a) NRAM (b) EL NiP/NRAM and (c) EL Ni-P nano globules, MWA EL Ni-P/NRAM at (d) 160 watt (e) 760 watt.
Figure 4 (a-d) shows the static and dynamic EM properties of 'as-synthesized' EL Ni-P nano globules, EL Ni-P/NRAM nanocomposite sample.