Photo- and Electroluminescence of Hydrogenated Nanocrystalline Si Prepared by Plasma Enhanced Chemical Vapor Deposition Techniques

Jae Hyun Shim; Nam Hee Cho

doi:10.4028/www.scientific.net/MSF.510-511.958

Paper Titles

Via/Hole Filling by Pulse-Reverse Copper Electroplating for 3D SiP
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Electrical and Luminescent Properties of Size Controlled ZnO Nanorods
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Structure and Electrochemical Properties of FeS_x Nanoparticles Synthesized by Chemical Vapor Condensation Process
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Effect of Nano-Structures on the Optical Features of Hydrogenated Amorphous Si Films
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Photo- and Electroluminescence of Hydrogenated Nanocrystalline Si Prepared by Plasma Enhanced Chemical Vapor Deposition Techniques
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Nanostructural and Optical Features of nc-Si:H Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Techniques
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Effect of Porosity on Fatigue Strength of Lotus-Type Porous Copper
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Microstructure, Mechanical Property and Antibacterial Characteristics of Ferritic Stainless Steel
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Effect of Surface Morphology on Apatite Formation
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HomeMaterials Science ForumMaterials Science Forum Vols. 510-511Photo- and Electroluminescence of Hydrogenated...

Photo- and Electroluminescence of Hydrogenated Nanocrystalline Si Prepared by Plasma Enhanced Chemical Vapor Deposition Techniques

Abstract:

We studied photoluminescence (PL) and electroluminescence (EL) properties of hydrogenated nanocystalline silicon (nc-Si:H) thin films prepared by applying the plasma enhanced chemical vapor deposition (PECVD) techniques. . A prototype of ITO/nc-Si:H/P-type Si wafer/Al EL devices was illustrated with its fundamental electrical and optical features. The nc-Si:H films exhibited PL spectra in a wavelength range of 350 ~ 700 nm with the maximum intensity at ~ 530 nm, which is attributed to quantum confinement effects (QCE) owing to the presence of nanocrystalline Si. The EL device produced EL spectra with their maximum intensity at ~ 525 nm which are similar to the PL spectra. The light emission is attributed to radiative recombination related to nanocrystalline Si contained in the hydrogenated amorphous Si (a-Si:H).