Nanostructural and Optical Features of nc-Si:H Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Techniques
The nanostructural and optical features of hydrogenated nanocrystalline silicon (nc-Si:H) thin films, which were prepared by plasma enhanced chemical vapor deposition (PECVD), were investigated as a function of deposition conditions. It was found that the crystallite size varied with the relative fraction of Si-H3 bonds in the films, [ ] eger n n n H Si H Si int 3 1 3 / ] [ = = ∑ − − , which was sensitively related with the flow rate of SiH4 reaction gas. The silicon nanocrystallites in the films enlarged from ~2.0 to ~8.0 nm in their size with increasing gas flow rate, while the PL emission energy varied from 2.5 to 1.8 eV; the relative fractions of the Si-H3, Si-H2, and Si-H bonds in the amorphous matrix were also varied sensitively with the SiH4 flow rate. A model for the nanostructure of the nc-Si:H films was suggested to discribe the variations in the size and chemical bonds of the nanocrystallites as well as the amorphous matrix depending on the deposition conditions.
Hyung Sun Kim, Yu Bao Li and Soo Wohn Lee
J. H. Shim et al., "Nanostructural and Optical Features of nc-Si:H Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Techniques", Materials Science Forum, Vols. 510-511, pp. 962-965, 2006