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Online since: May 2018
Authors: R.L. Monaledi, M.S. Tshehla, Oluwole Daniel Makinde, Bijjanal Jayanna Gireesha, Basavarajappa Mahanthesh, N.S. Shashikumar
Alloys have diverse biomedical as well as engineering applications such as advanced powder technology, drug delivery system, nuclear reactor, hip joint replacement processes, fuel cells, aerospace science technology, surgical implantation and various biological treatments [20-22].
Rashidi, Unsteady convective heat and mass transfer in pseudoplastic nanofluid over a stretching wall, Advanced Powder Technology, 26(5) (2015) 1319-1326
Applied Thermal Engineering, 100 (2016) 979-986
Journal of Aerospace Engineering, 29(2) (2016), Article# 04015037
Alexandria Engineering Journal, 55(1) (2016) 569-581
Online since: September 2025
Authors: Ulrich Schmid, Christopher Zellner, Georg Pfusterschmied, Priyank Parmar, Guenter Wedl, Manoj Kumar Yadav
Engineered substrates present a promising technological approach for achieving this challenging goal.
PCS polymers exhibit strong adhesion to a wide range of substrates, exceptional chemical resistance, UV stability, and thermal durability, making them highly suitable for advanced bonding applications.
PCS shows promise as a bonding interface for SiC substrates, paving the way for further research into doped SiC layers and their electrical properties for advanced power electronics applications.
Rouchier, et al., "150 Mm SiC Engineered Substrates for High-Voltage Power Devices.," Materials Science Forum, vol. 1062, pp. 131-135, 2022
Campbell, Manufacturing Processes for Advanced Composites, 2003
Online since: May 2026
Authors: Sven Strüber, P. J. Wellmann, P. Wunder, Cristina Grazzi, Lucrezia Tana, Ole Schneider, Tobias Wagner, Jakob Wiedemann
In addition to the SiC growth study, we will also introduce the newly developed TableTopCSTM growth machine which meets special requirements for advanced CS-PVT growth.
In the following we are addressing in this study (i) the achieved 4H-SiC polytype stability and (ii) new aspects of advanced p-type doping by aluminum which are possible in the ballistic mass transport regime of CS-PVT.
CS-PVT, however, enables a new growth mode for advanced doping which makes use of ballistic mass transport.
Wellmann, Materials Science Forum, 1062, 74 (2022)
Wellmann, Materials Science Forum, 740-742, 52 (2013).
Online since: July 2013
Preface This volume of Materials Science Forum represents a selection of the papers presented at the sixth International Light Metals Technology Conference held in Old Windsor (UK) on 24-26 July 2013 (LMT2013).
BCAST is the lead partner of the EPSRC Centre - LiME, a national centre of excellence in liquid metal engineering supported by the UK Engineering and Physical Sciences Research Council.
BCAST and the EPSRC Centre - LiME has a balanced portfolio of fundamental and user-led research in the areas of solidification science and the development of new alloys and technologies for closed-loop recycling, to support sustainability of the metallurgical industry Light Metals Technology is a biennial conference that focuses on recent advances in the science and technologies associated with aluminium, magnesium and titanium alloys.
Online since: July 2014
Preface     This volume of Materials Science Forum contains the selected papers presented at the  6 th International Conference on High Speed Machining (ICHSM) held in Harbin, China,  from 24 to 25 July 2014.     
The ICHSM aims on the communication and cooperation of the research results and  technology experiences about high-speed machining among the research institutions,  academic organizations, machine tool industries and all kinds of manufacturing  enterprises, which supply a new opportunity for the high-speed theory and practice  in the field of science, engineering and industrial to reveal recent achievements,  exchange experience of success, and to talk about the future development.     
We would also like to  extend our acknowledgement to authors for sharing their results and experience in  advance of high speed machining and high performance machining.     
Lei Zhang, China                  Launched by   Nanjing University of Aeronautics & Astronautics, China   Darmstadt University of Technology, Germany   Shandong University, China   Guangdong University of Technology, China   Shanghai Jiao Tong University, China     Harbin University of Science and Technology, China       Hosted by   Harbin University of Science and Technology, China      Sponsored by   National Natural Science Foundation of China   Chinese Society of Advanced Machining and Manufacturing Technology    Heilongjiang Metal Cutting Tool Engineering Association    Harbin University of Science and Technology, China   
Online since: December 2004
Authors: Cheng Rui Zhang, Ri Liang Liu
Materials Science Forum Vols. *** (2004) pp.326-329 online at http://scientific.net  2004 Trans Tech Publications, Switzerland On CNC Machining and Part Program Preprocessing Based on STEP-NC C.R.
Liu 1,b 1 School of Mechanical Engineering, Shandong University, Jinan 250061, China a crzhang@sdu.edu.cn, bliuriliang@sdu.edu.cn Keywords: NC machining, CNC, STEP, STEP-NC Abstract.
Fig.1 Abstract of STEP-NC for milling Fig.2 Information growth in CAD-CAM-CNC chain CAM STEP-NC controller CAD model(ISO 10303 ) STEP-NC(ISO 14649) Offline programming Realtime machining Resources, feedback… CAD Geometry, tolerance… Geometry, tolerance… Process, Cutting tools… Workplan, Workingstep … Advances in Materials Manufacturing Science and Technology 328 However, STEP-NC brings forth some significant changes.
Fig.4 Part program and the workpiece Interpreter Decision maker Executor Part program Materials Science Forum Vols. *** 329 Fig.6 shows the process related information for the workingstep.
Loffredo: Manufacturing Engineering Vol. 23(2001), p. 38 [3] S.H.
Online since: August 2007
Authors: Hasan Mandal, S.R. Kushan, Pavol Šajgalík, N.C. Acikbas, J. Křest'an
Mandal1,e 1 Department of Materials Science and Engineering, Anadolu University, 26555 Eskisehir, Turkey 2MDA Advanced Ceramics, Ltd., 26110, Eskisehir, Turkey 3 Slovak Academy of Sciences, Institute of Inorganic Chemistry, 84236, Bratislava, Slovakia a srkushan@anadolu.edu.tr, bncalis@anadolu.edu.tr, c uachkjan@savba.sk, d uachsajg@savba.sk, ehmandal@anadolu.edu.tr Keywords: α-SiAlON, tape casting, orientation, seeding Abstract.
Forum, Vol. 325-326 (2000), p. 325 4 5 6 7 YSm YSm+s YSm+c YSm+cc KIc (MPa.m1/2)[5] I.
Forum Vol. 383 (2002), p.31 [7] H.
Forum Vols. 325-326 (2000), p.213 [8] S.R.
Online since: June 2004
Authors: P. Pirouz, M. Zhang, H. Lendenmann
Pirouz1* 1 Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106-7204, USA 2 ABB Corporate Research, SE-721 78, Västerås, Sweden Keywords: Transmission Electron Microscopy, SiC, Device Abstract.
Skytt, Materials Science Forum 353-356 (2001), p. 727 [4] J.
Skytt, Materials Science Forum 353-356 (2001), p. 299 [5] M.
Wang, Materials Science Forum, 389-393 (2001), p. 427 [11] S.
Pirouz, Dislocations in SiC and their Recombination-Enhanced Motion, in Japan-US Workshop on Functional Fronts in Advanced Ceramics, ed.
Online since: September 2014
Authors: Carlos Maurício Fontes Vieira, Sergio Neves Monteiro, Michelle Pereira Babisk, Angélica Pereira Ribeiro
Pedro Calmon, 900 - Cidade Universitária, 21941-90, Rio de Janeiro, Brazil 2UENF - State University of the Northern Rio de Janeiro, LAMAV - Advanced Materials Laboratory; Av.
Alberto Lamego, 2000, 28013-602, Campos dos Goytacazes, Brazil. 3IME - Military Institute of Engineering, Department of Materials Science, Praça General Tibúrcio, 80, 22290-270, Rio de Janeiro, Brazil.
Vieira: Mater Sci Forum Vol. 660-661 (2010), p. 675
Forum Vols 660-661 (2010), p. 801
Forum Vols 591-593 (2008), p. 477
Online since: February 2014
Authors: Yuuki Ishida, Katsunori Asano, Kazutoshi Kojima, Koji Nakayama, Hidekazu Tsuchida, Tetsuya Miyazawa, Atsushi Tanaka, Shi Yang Ji
Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT Tetsuya Miyazawa1, a, Shi-yang Ji2, b, Kazutoshi Kojima2, c, Yuuki Ishida2, d, Koji Nakayama3, e, Atsushi Tanaka3, f, Katsunori Asano3, g, and Hidekazu Tsuchida1, h 1Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa, 240-0196, Japan 2National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan 3Power Engineering R&D Center, Kansai Electric Power Co., Inc., 3-11-20 Nakoji, Amagasaki, Hyogo, 661-0974, Japan ayo-miya@criepi.denken.or.jp, baist-ki@aist.go.jp, ckazu-kojima@aist.go.jp, dy-ishida@aist.go.jp, enakayama.koji@a3.kepco.co.jp, ftanaka.atsushi@b5.kepco.co.jp, gasano.katsunori@c2.kepco.co.jp, htsuchida@criepi.denken.or.jp Keywords: 4H-SiC, epitaxial growth, IGBT, high voltage, carrier lifetime Abstract.
Forum 740-742 (2013) 954
Forum 740-742 (2013) 958
Forum 717-720 (2012) 313.