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Venturini had certified that the max voltage transfer ratio of matrix converter is only 0.866 in linear modulation band in theory[1].
These two new topological circuits with similar characteristics: 1.
IEEE Trans. on Power Electronics, Vol. 4, No. 1, January 1989, 4(1): 101-112
[2] J.Holtz,and U.Boelkens, IEEE Transon Industrial electronics, 1989,36(4): 475-479
Proceedings of the IEEE International Symposium on Industrial Electronics, ISIE '96. 1996, 1:466-469

Table 1.
Mix proportions per 1 m3.
Each randomly taken sample weighed approximately 1 kg.
Fig. 1 Average values of compressive strength.
References [1] T.C.

description material 1 1800 01 Long Front Memb 90x90x5 MS 1 844x180 02 Tracker Frame 100x10 MS Sheet main frame sub-assembly Scale 1:5 Projection 3rd Angle FMDU & K.
Components of DLMS: The DLMS consists of ten classes, as shown in Table 1.
Technology Number Allocation: The technology number is allocated as per the following procedure: 1.
In this case, these numbers appear in the bill of materials (BOM) as Part No., (see Figure 1).
Picturing Machines 1400-1700, Cambridge, MIT Press, 2004, pp. 1-10

Intrinsic and extrinsic CMR have been recognised as the origin of MR in manganite [1].
There are three stages of weight loss in NSMO precursor powder as illustrated in Fig. 1.
Fig. 1.
Table 1.
References [1] K.

References [1] J.
M. 3(5) (1998) 474-479
Colloid Interf Sci. 479 (2016) 150-159
Mater. 84(1) (2001) 57-71
Ch. 286(1) (2010) 185-193

The density and molar volume of glass as a function of Nd2O3 content are shown in Fig. 1.
Table 1.
References [1] C.K.
Solid. 356 (2010) 474-479
Eng. 2014 (2014) 1-5.

The chemical compositions and tests on these pipes are shown in Table 1.
Table 1.
References [1] J.M.
Morimoto, X120 UOE Pipeline with Improved Properties and Varied Sizes, Proceedings of IPC 2006 1 (2006) 10–15
Cagganello, Electric resistance welding at a glance, TPJ-The Tube & Pipe Journal 1 (2002) 44-55

Nie 1,a and Z.
The slope compatibility conditions can be expressed as: ∑=== N j jij k k i vA ldx dv 1 1 ϕ , Mk L,2,1=
Numerical Examples Example 1.
References [1] W.F.
Computers & Structures Vol. 48 (1993), p. 473-479

Table 1.
Fig. 1 Particle size distribution of tested raw materials.
Material Matrix density [kg/m3] Bulk density [kg/m3] Open porosity [%] 28 days water curing RP 2 173 1 435 34.1 DB 8 2 198 1 475 33.3 DB 24 2 181 1 456 33.8 HE 8 2 209 1 472 33.5 HE 24 2 163 1 433 34.4 LI 8 2 176 1 473 32.6 LI 24 2 135 1 451 32.9 Table 6.
Basic physical properties of researched materials after 56 days exposure to laboratory conditions and CO2 chamber Material Matrix density [kg/m3] Bulk density [kg/m3] Open porosity [%] Matrix density [kg/m3] Bulk density [kg/m3] Open porosity [%] 56 days laboratory conditions 56 days CO2 chamber RP 2 270 1 556 31.4 2 412 1 735 28.1 DB 8 2 330 1 629 30.1 2 476 1 806 27.1 DB 24 2 323 1 584 31.8 2 411 1 695 29.6 HE 8 2 338 1 617 30.8 2 479 1 792 27.7 HE 24 2 316 1 559 32.7 2 416 1 704 29.5 LI 8 2 326 1 588 31.6 2 484 1 797 27.7 LI 24 2 308 1 572 32.8 2 434 1 712 29.7 From the measured data of basic physical properties, the development of mechanical strength given in Table 7 can be explained.
References [1] S.

Maruyama Department of Electrical and Electronic Engineering, Meiji University, 1-1-1 Higashi-mita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan Keywords: implantation, Er (Erbium), ESR, crystallinity evaluation Abstract.
(6)(6)(6)(6) (5)(5)(5)(5) (4)(4)(4)(4) (3)(3)(3)(3) (2)(2)(2)(2) (1)(1)(1)(1) current (μA) current (μA) current (μA) current (μA) voltage (V)voltage (V)voltage (V)voltage (V) (1) 1400℃ 30m in
I-V characteristics of Ni/ 4H-SiC:Er 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 PL Intensity (arb.units) (c ) (b ) (a) (d ) (a )1 4 0 0 oC (b )1 5 0 0 oC (c )1 6 0 0 oC (d )1 7 0 0 oC V irgin A s- Im p la P L a t 1 5 K 4 H - S iC :E r E r:1 x1 0 1 4c m - 2, 2 M e V E xc itatio n :3 2 5 .0 n m , 2 0 m W A n n e a lin g:3 0 m in .
W ave le n gth (n m ) Journal Title and Volume Number (to be inserted by the publisher) 4 1 5 0 0 1 5 2 0 1 5 4 0 1 5 6 0 1 5 8 0 1 6 0 0 P L a t 1 5 K 4 H - S iC :E r E r :1 x 1 0 1 3 c m - 2 , 2 M e V E x c it a t io n :3 2 5 .0 n m , 2 0 m W A n n e a lin g :3 0 m in . 1 4 0 0 o C 1 5 0 0 o C 1 6 0 0 o C 1 7 0 0 o C PL Intensity (arb.units) W a v e le n g t h ( n m ) Fig.5 the temperature dependence of the Er3+-related PL spectra of n-type 4H-SiC:Er dominant line at 1534.0 nm, 11 peaks and other small peaks.
B, vol. 106 (1995), pp. 477-479