Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process

S. Uekusa; H. Maruyama

doi:10.4028/www.scientific.net/MSF.457-460.779

Paper Titles

Spin-On Doping of Porous SiC with Er
p.763

Sc Impurity in Silicon Carbide
p.767

Measurement of Low Level Nitrogen in Silicon Carbide Using SIMS
p.771

Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements
p.775

Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process
p.779

Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon Carbide
p.783

Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance
p.787

Investigation of Electronic States of Pd in 4H-SiC by Means of Radiotracer-DLTS
p.791

Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC Epilayers
p.797

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Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

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779-782

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https://doi.org/10.4028/www.scientific.net/MSF.457-460.779

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June 2004

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S. Uekusa, H. Maruyama

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Crystallinity Evaluation, ER, ESR, Implantation

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References

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