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Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC
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Non-Contact Doping Profiling in Epitaxial SiC
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Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates
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Spin-On Doping of Porous SiC with Er
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Sc Impurity in Silicon Carbide
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Measurement of Low Level Nitrogen in Silicon Carbide Using SIMS
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Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements
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Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process
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Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon Carbide
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Sc Impurity in Silicon Carbide

Sc Impurity in Silicon Carbide

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

767-770

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.767

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Online since:

June 2004

Authors:

E.I. Yuryeva, V.I. Zubkov, V.S. Ballandovich, I.I. Parfenova

Keywords:

DFT X_α-DV Method, DLTS, DOS, Sc, Silicon Carbide (SiC)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] V.S. Ballandovich: Sov. Fiz. Tekh. Poluprovodn. Vol. 25, N 2 (1991), p.287. 2 A.V. Solomonov, V.I. Zubkov: Physikalisch-Technische Bundesanstalt Bericht IT-7 (Berlin 1999), p.189.

[3] A.N. Tikhonov, V.Y. Arsenin: Solutions of ill-posed problems. (Washington: Winston and Sons, 1977).

[4] F.V. Averil., D.E. Ellis. J. Chem. Phys., 1973, p.6412.

[5] E.I. Yuryeva, A.L. Ivanovskii. Z. Struc. Khim., 2002, 43, p.220.