Measurement of Low Level Nitrogen in Silicon Carbide Using SIMS

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

771-774

Citation:

L. Wang, "Measurement of Low Level Nitrogen in Silicon Carbide Using SIMS", Materials Science Forum, Vols. 457-460, pp. 771-774, 2004

Online since:

June 2004

Authors:

Export:

Price:

$38.00

[1] R.S. Hockett, et al.: High Purity Silicon, Vol. VI, ECS PV 2000-17, 2000, p.584.

[2] A. Ishitani, et al.: Proceedings of the international Conference on Materials and Process Characterization for VLSI (ICMPC'88), 1988, p.124.