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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Measurement of Low Level Nitrogen in Silicon...

Measurement of Low Level Nitrogen in Silicon Carbide Using SIMS

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

771-774

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.771

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Online since:

June 2004

Authors:

Larry Wang

Keywords:

Detection Limits, Nitrogen, Silicon Carbide (SiC), SIMS

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] R.S. Hockett, et al.: High Purity Silicon, Vol. VI, ECS PV 2000-17, 2000, p.584.

[2] A. Ishitani, et al.: Proceedings of the international Conference on Materials and Process Characterization for VLSI (ICMPC'88), 1988, p.124.