Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance

Matthias Bickermann; K. Irmscher; Boris M. Epelbaum; Albrecht Winnacker

doi:10.4028/www.scientific.net/MSF.457-460.787

Paper Titles

Measurement of Low Level Nitrogen in Silicon Carbide Using SIMS
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Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements
p.775

Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process
p.779

Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon Carbide
p.783

Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance
p.787

Investigation of Electronic States of Pd in 4H-SiC by Means of Radiotracer-DLTS
p.791

Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC Epilayers
p.797

Electro-Chemical Mechanical Polishing of Silicon Carbide
p.801

Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC Substrates
p.805

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Analysis of Different Vanadium Charge States in...

Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

787-790

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.787

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Online since:

June 2004

Authors:

Matthias Bickermann, K. Irmscher, Boris M. Epelbaum, Albrecht Winnacker

Keywords:

6H-SiC Bulk Crystals, EPR, Optical Absorption, Semi-Insulating SiC, Vanadium Doping

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References

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