Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC Epilayers

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

797-800

DOI:

10.4028/www.scientific.net/MSF.457-460.797

Citation:

K. S. Lee et al., "Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC Epilayers ", Materials Science Forum, Vols. 457-460, pp. 797-800, 2004

Online since:

June 2004

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$35.00

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