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Paper Titles
Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process
p.779
Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon Carbide
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Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance
p.787
Investigation of Electronic States of Pd in 4H-SiC by Means of Radiotracer-DLTS
p.791
Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC Epilayers
p.797
Electro-Chemical Mechanical Polishing of Silicon Carbide
p.801
Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC Substrates
p.805
Surface Modification of 3C-SiC for Good Ni Ohmic Contact
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Mechanisms in Electrochemical Etching of α-SiC Substrates
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Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC Epilayers

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

797-800

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.797

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Online since:

June 2004

Authors:

Kwang Seok Lee, Sung Hyuk Lee, Man Kim, Kee Suk Nahm

Keywords:

6H-SiC Epilayers, As-Received 6H-SiC, CMP, CVD Reactor, H2 Etching, Homoepitaxy

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] J. W. Palmour, J. A. Edmond, H. S. Kong and C. H. Carter Jr: Proceedings of the 7th Trieste Semiconductor Symposium-Wide Bandgap Semiconductors (C. Van De Walle. Ed., 1993).

Google Scholar

[2] L. Zhou, V. Audurier, P. Pirouz, and J.A. Powell, J. Electrochem. Soc. 1997; 144: L161.

Google Scholar

[3] W.J. Everson, D.W. Snyder, and V.D. Heydemann, Material Science Forum 2000; 338-342: 837.

Google Scholar

[4] Z.Y. Xie, C.H. Wei, L.Y. Li, Q.M. Yu, J.H. Edgar, Journal of Crystal Growth 2000; 217: 115.

Google Scholar

[5] C. Hallin, F. Qwman, P. Martensson, A. Ellison, A. Konstantinov, O. Kordina, and E. Janzen, J. Crystal Growth 1997; 181: 241.

Google Scholar

[6] S. Nakamura, T. Kimoto, H. Matsunami, S. Tanaka, N. Teraguchi, and A. Suzuki, Appl. Phys. Lett. 2000; 76: 3412.

Google Scholar

[7] Y. Ishida, T. Takahashi, H. Okumura, T. Sekigawa, and S. Yoshida, Material Science Forum 2000; 338-342; 1235.

Google Scholar

[8] J. Morrison, A.J. Pidduck, V. Moore, P.J. Wilding, Keith Hilton, M.J. Uren and C.M. Johnson, Material Science Forum 2000; 338-342; 1199.

DOI: 10.4028/www.scientific.net/msf.338-342.1199

Google Scholar

[9] K. C. Kim, H. W. Shim, E. -K. Suh, H. J. Lee, and K. S. Nahm, J. Korean Phys. Soc., 32, (1998) 588.

Google Scholar

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