Mechanisms in Electrochemical Etching of α-SiC Substrates

Hideno Mikami; Tomoaki Hatayama; Hiroshi Yano; Yukiharu Uraoka; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.457-460.813

Paper Titles

Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC Epilayers
p.797

Electro-Chemical Mechanical Polishing of Silicon Carbide
p.801

Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC Substrates
p.805

Surface Modification of 3C-SiC for Good Ni Ohmic Contact
p.809

Mechanisms in Electrochemical Etching of α-SiC Substrates
p.813

Modification of the Silicon Carbide by Proton Irradiation
p.817

Etching of SiC with Fluorine ECR Plasma
p.821

Characterization of 3C-SiC Monocrystals Using Positron Annihilation Spectroscopy
p.825

Improvement of SiC Wafer Warp by Annealing
p.829

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Mechanisms in Electrochemical Etching of α-SiC Substrates

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

813-816

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.813

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Online since:

June 2004

Authors:

Hideno Mikami, Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki

Keywords:

Electrochemical Etching, OH-Species, pH Value

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