Characterization of 3C-SiC Monocrystals Using Positron Annihilation Spectroscopy

X. Kerbiriou; A. Greddé; Marie France Barthe; P. Desgardin; G. Blondiaux

doi:10.4028/www.scientific.net/MSF.457-460.825

Paper Titles

Surface Modification of 3C-SiC for Good Ni Ohmic Contact
p.809

Mechanisms in Electrochemical Etching of α-SiC Substrates
p.813

Modification of the Silicon Carbide by Proton Irradiation
p.817

Etching of SiC with Fluorine ECR Plasma
p.821

Characterization of 3C-SiC Monocrystals Using Positron Annihilation Spectroscopy
p.825

Improvement of SiC Wafer Warp by Annealing
p.829

Comparison of Different Surface Pre-Treatments to n-Type 4H-SiC and their Effect on the Specific Contact Resistance of Ni Ohmic Contacts
p.833

Structural Characterization of Alloyed Al/Ti and Ti Contacts on SiC
p.837

Improved AlNi Ohmic Contacts to p-Type SiC
p.841

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Characterization of 3C-SiC Monocrystals Using...

Characterization of 3C-SiC Monocrystals Using Positron Annihilation Spectroscopy

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

825-828

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.825

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Online since:

June 2004

Authors:

X. Kerbiriou, A. Greddé, Marie France Barthe, P. Desgardin, G. Blondiaux

Keywords:

Doppler Broadening, Lifetime Spectroscopy, Polishing, Positron Annihilation, Silicon Carbide (SiC), Vacancy Defects

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References

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