Improved AlNi Ohmic Contacts to p-Type SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

841-844

Citation:

B. H. Tsao et al., "Improved AlNi Ohmic Contacts to p-Type SiC", Materials Science Forum, Vols. 457-460, pp. 841-844, 2004

Online since:

June 2004

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$38.00

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[2] S. Liu, Bang-Hung Tsao, and J Scofield: 6th Int'l High Temp. Elect. Conf., CD-ROM, (2002).

[3] S.E. Mahoney, B.A. Hull, J.Y. Lin, and J. Crofton: Solid State Electronics, Vol. 46 (2002), p.689.

[4] J. Crofton, L. Beyer, J. Williams, E. Luckowski, S. Mahoney, and J. DeLucca, Solid State Electronics, Vol. 41, No 11 (1997).

DOI: https://doi.org/10.1016/s0038-1101(97)00168-8

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