Improved AlNi Ohmic Contacts to p-Type SiC

Bang Hung Tsao; Sam Liu; James D. Scofield

doi:10.4028/www.scientific.net/MSF.457-460.841

Paper Titles

Characterization of 3C-SiC Monocrystals Using Positron Annihilation Spectroscopy
p.825

Improvement of SiC Wafer Warp by Annealing
p.829

Comparison of Different Surface Pre-Treatments to n-Type 4H-SiC and their Effect on the Specific Contact Resistance of Ni Ohmic Contacts
p.833

Structural Characterization of Alloyed Al/Ti and Ti Contacts on SiC
p.837

Improved AlNi Ohmic Contacts to p-Type SiC
p.841

Electrical Characterization of Deposited and Oxidized Ta₂Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures
p.845

In-Situ Investigation of Carbon Reduction at Ni/4H-SiC Interface Using a Silicon Interlayer
p.849

The Formation of Low Resistance Ohmic Contacts to 4H-SiC, Circumventing the Need for Post Annealing, Studied by Specific Contact Resistance Measurements and X-Ray Photoelectron Spectroscopy
p.853

The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC
p.857

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Improved AlNi Ohmic Contacts to p-Type SiC

Improved AlNi Ohmic Contacts to p-Type SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

841-844

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.841

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Online since:

June 2004

Authors:

Bang Hung Tsao, Sam Liu, James D. Scofield

Keywords:

4H-SiC, Contact Resistivity, Ohmic Contact, Transmission Line Model (TLM)

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References

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DOI: 10.1016/s0038-1101(97)00168-8

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