[1]
O. Korolkov, T. Rang, A. Syrkin. and V. Dmitirev: Proc. Of European Conference on SiC and Related Materials (ECSCRM'2002) Sept. 1-5, Linköping, Sweden, pp.697-700.
Google Scholar
[2]
Q. Zhang, V. Madangarli, M. Tarplee, and T.S. Sudarshan: J. Electron. Mater. 30, 3, (2001), pp.196-201.
Google Scholar
[3]
W.R. Harrell, J. Zhang, and K.F. Poole: J. Electron. Mater. 31, 10, (2002).
Google Scholar
[4]
O. Korolkov and T. Rang: Mater. Sci. Forum 603, (2001), pp.353-356.
Google Scholar
[5]
S.M. Sze: Physical of Semiconductor Devices. 2nd ed. (New York: Wiley, 1981).
Google Scholar
[6]
S.K. Cheung and N.W. Cheung: Appl. Phys. Lett., 49, (1986), pp.85-87.
Google Scholar
[7]
A. Itoh and H. Matsunami, Crit. Rev. Solid State Mater. Sci. 22, 111, (1997).
Google Scholar