The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

857-860

Citation:

O. Korolkov et al., "The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC", Materials Science Forum, Vols. 457-460, pp. 857-860, 2004

Online since:

June 2004

Export:

Price:

$38.00

[1] O. Korolkov, T. Rang, A. Syrkin. and V. Dmitirev: Proc. Of European Conference on SiC and Related Materials (ECSCRM'2002) Sept. 1-5, Linköping, Sweden, pp.697-700.

[2] Q. Zhang, V. Madangarli, M. Tarplee, and T.S. Sudarshan: J. Electron. Mater. 30, 3, (2001), pp.196-201.

[3] W.R. Harrell, J. Zhang, and K.F. Poole: J. Electron. Mater. 31, 10, (2002).

[4] O. Korolkov and T. Rang: Mater. Sci. Forum 603, (2001), pp.353-356.

[5] S.M. Sze: Physical of Semiconductor Devices. 2nd ed. (New York: Wiley, 1981).

[6] S.K. Cheung and N.W. Cheung: Appl. Phys. Lett., 49, (1986), pp.85-87.

[7] A. Itoh and H. Matsunami, Crit. Rev. Solid State Mater. Sci. 22, 111, (1997).

Fetching data from Crossref.
This may take some time to load.