Study of TiW/Au Thin Films Metallization Stack for High Temperature and Harsh Environment Devices on 6H Silicon Carbide

A. Baeri; Vito Raineri; Fabrizio Roccaforte; Francesco La Via; Edoardo Zanetti

doi:10.4028/www.scientific.net/MSF.457-460.873

Paper Titles

The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC
p.857

Schottky-Ohmic Transition in Nickel Silicide/SiC-4H System: the Effect of Non Uniform Schottky Barrier
p.861

Effects of Thermal Treatments on the Structural and Electrical Properties of Ni/Ti Bilayers Schottky Contacts on 6H-SiC
p.865

Electrical Characterization of Inhomogeneous Ni₂/Si/SiC Schottky Contacts
p.869

Study of TiW/Au Thin Films Metallization Stack for High Temperature and Harsh Environment Devices on 6H Silicon Carbide
p.873

High Temperature and High Power Stability Investigation of Al-Based Ohmic Contacts to p-Type 4H-SiC
p.877

Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC
p.881

Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation
p.885

Structural Defects Formed in Al-Implanted and Annealed 4H-SiC
p.889

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Study of TiW/Au Thin Films Metallization Stack for High Temperature and Harsh Environment Devices on 6H Silicon Carbide

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Materials Science Forum (Volumes 457-460)

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873-876

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.873

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Online since:

June 2004

Authors:

A. Baeri, Vito Raineri, Fabrizio Roccaforte, Francesco La Via, Edoardo Zanetti

Keywords:

Harsh Environment, High-Temperature, Metallization, Silicon Carbide (SiC)

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References

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