Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

885-888

DOI:

10.4028/www.scientific.net/MSF.457-460.885

Citation:

L. Cheng et al., "Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation", Materials Science Forum, Vols. 457-460, pp. 885-888, 2004

Online since:

June 2004

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$35.00

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