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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Effect of High-Dose Aluminium Implantation on...

Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

885-888

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.885

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Online since:

June 2004

Authors:

Lin Cheng, Janna R. B. Casady, Janice Mazzola, Jeff B. Casady, Yaroslav Koshka, V. Bondarenko

Keywords:

4H-SiC, FT-IR, High Frequency C-V Characteristics, High-Fluence Implantation, Oxidation, Photoluminescence (PL), SIMS

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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