Paper Titles
High Temperature and High Power Stability Investigation of Al-Based Ohmic Contacts to p-Type 4H-SiC
p.877
Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC
p.881
Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation
p.885
Structural Defects Formed in Al-Implanted and Annealed 4H-SiC
p.889
Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
p.893
Effect of Implantation Temperature on Redistribution of Al in SiC during Annealing
p.897
Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC
p.901
Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy
p.905
Annealing Process of N+-/P+-Ions Coimplanted along with Si+-, C+- or Ne+-Ions into 4H-SiC – Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?
p.909

Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

893-896

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.893

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Online since:

June 2004

Authors:

Servane Blanqué, R. Pérez, Philippe Godignon, Narcis Mestres, Erwan Morvan, Alexandre Kerlain, Christian Dua, Christian Brylinski, Marcin Zielinski, Jean Camassel

Keywords:

Atomic Force Microscope (AFM), Nitrogen Activation, Phosphorus Activation, Raman Spectroscopy, Room Temperature Implantation, TLM Test Patterns

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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References

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