Annealing Process of N+-/P+-Ions Coimplanted along with Si+-, C+- or Ne+-Ions into 4H-SiC – Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?

Frank Schmid; Gerhard Pensl

doi:10.4028/www.scientific.net/MSF.457-460.909

Paper Titles

Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
p.893

Effect of Implantation Temperature on Redistribution of Al in SiC during Annealing
p.897

Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC
p.901

Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy
p.905

Annealing Process of N⁺-/P⁺-Ions Coimplanted along with Si⁺-, C⁺- or Ne⁺-Ions into 4H-SiC – Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?
p.909

Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face
p.913

Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC
p.917

Investigation of Two-Stage Activation Annealing of Al-Implanted 4H-SiC Layers
p.921

Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation
p.925

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Annealing Process of N+-/P+-Ions Coimplanted along...

Annealing Process of N⁺-/P⁺-Ions Coimplanted along with Si⁺-, C⁺- or Ne⁺-Ions into 4H-SiC – Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

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909-912

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https://doi.org/10.4028/www.scientific.net/MSF.457-460.909

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June 2004

Authors:

Frank Schmid, Gerhard Pensl

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Ion Implantation, Nitrogen Donor, Phosphorus Donors, Site-Competition-Effect

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