Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

905-908

DOI:

10.4028/www.scientific.net/MSF.457-460.905

Citation:

K. Narita et al., "Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy ", Materials Science Forum, Vols. 457-460, pp. 905-908, 2004

Online since:

June 2004

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