Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy

K. Narita; Yasuto Hijikata; Hiroyuki Yaguchi; Sadafumi Yoshida; Junji Senzaki; Shinichi Nakashima

doi:10.4028/www.scientific.net/MSF.457-460.905

Paper Titles

Structural Defects Formed in Al-Implanted and Annealed 4H-SiC
p.889

Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
p.893

Effect of Implantation Temperature on Redistribution of Al in SiC during Annealing
p.897

Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC
p.901

Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy
p.905

Annealing Process of N⁺-/P⁺-Ions Coimplanted along with Si⁺-, C⁺- or Ne⁺-Ions into 4H-SiC – Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?
p.909

Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face
p.913

Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC
p.917

Investigation of Two-Stage Activation Annealing of Al-Implanted 4H-SiC Layers
p.921

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Characterization of Electrical Properties in...

Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

905-908

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.905

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Online since:

June 2004

Authors:

K. Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Junji Senzaki, Shinichi Nakashima

Keywords:

4H-SiC, Activation Anneal, Carrier Concentration, Crystalline Damage, Hall Measurements, Infrared Reflectance Spectroscopy, Ion Implantation, Mobility

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