Effect of Implantation Temperature on Redistribution of Al in SiC during Annealing

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

897-900

DOI:

10.4028/www.scientific.net/MSF.457-460.897

Citation:

I.O. Usov et al., "Effect of Implantation Temperature on Redistribution of Al in SiC during Annealing", Materials Science Forum, Vols. 457-460, pp. 897-900, 2004

Online since:

June 2004

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$35.00

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