Paper Titles

Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC
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Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation
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Structural Defects Formed in Al-Implanted and Annealed 4H-SiC
p.889

Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
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Effect of Implantation Temperature on Redistribution of Al in SiC during Annealing
p.897

Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC
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Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy
p.905

Annealing Process of N⁺-/P⁺-Ions Coimplanted along with Si⁺-, C⁺- or Ne⁺-Ions into 4H-SiC – Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?
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Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face
p.913

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Effect of Implantation Temperature on...

Effect of Implantation Temperature on Redistribution of Al in SiC during Annealing

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

897-900

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.897

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Online since:

June 2004

Authors:

I.O. Usov, A.A. Suvorova, A.V. Suvorov

Keywords:

Diffusion, Ion Implantation, Radiation Damage

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] Y. Tajima, K. Kijima and W.D. Kingery: J. Chem. Phys. Vol. 77 (1982), p.2592.

[2] K.K. Burdel', P.V. Varankin, V.N. Makarov, A.V. Suvorov and N.G. Chechenin: Sov. Phys. Solid State Vol. 30 (1988), p.364.

[3] M. Laube, G. Pensl and H. Itoh: Appl. Phys. Lett. Vol. 74 (1999), p.2292.

[4] H. Bracht, N.A. Stolwijk, M. Laube and G. Pensl: Appl. Phys. Lett. Vol. 77 (2000), p.3188.

[5] O. Meyer and J.W. Mayer: J. Appl. Phys. Vol. 41 (1970), p.4166.

[6] E.N. Mokhov, Yu.A. Vodakov, and G.A. Lomakina: Sov. Phys. Solid State Vol. 11 (1969), p.415.

[7] A.A. Suvorova, I.O. Usov, O.I. Lebedev, G. Van Tendeloo and A.V. Suvorov: Mat. Res. Soc. Proc. Vol. 512 (1998), p.481.

[8] A.A. Suvorova, O.I. Lebedev, A.V. Suvorov and I.O. Usov: Inst. Phys. Conf. Ser. Vol. 157 (1997), p.531.

[9] I.O. Usov, A.A. Suvorova, V.V. Sokolov, Yu.A. Kudryavtsev and A.V. Suvorov: J. Appl. Phys. Vol. 86 (1999), p.6039.

[10] M. Miyake and S. Aoyama: J. Appl. Phys. Vol. 63 (1988), p.1754.

[11] A.S. Nowick and J.J. Burton: Diffusion in Solids (Academic Press, 1975).

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[10] [16] [10] [17] [10] [18] [10] [19] [10] [20] [10] [21] as-implanted@Timp =1800 o C annealed@Tann=1600 o C annealed@Tann=1800 o C Al concentration, cm-3 Depth, nm Fig. 5. SIMS profiles of Al implanted at Timp = 1800 o C and annealed at Tann = 1600 and 1800 o C for 320 second.

DOI: 10.1017/9781108647403.006