Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

881-884

DOI:

10.4028/www.scientific.net/MSF.457-460.881

Citation:

A. Scorzoni et al., "Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC ", Materials Science Forum, Vols. 457-460, pp. 881-884, 2004

Online since:

June 2004

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