Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

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881-884

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A. Scorzoni et al., "Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC ", Materials Science Forum, Vols. 457-460, pp. 881-884, 2004

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June 2004

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[1] J. Crofton, L. Beyer, J. R. Williams, E. D. Luckowski, S. E. Mohney, J. M. DeLucca: SolidState Electron., 41 (1997) , p.1725.

[2] J. Crofton, S. E. Mohney, J. R. Williams, T. Isaacs-Smith: Solid-State Electron, 46 (2002), p.109.

[3] J. Crofton, P. A. Barnes, J. R. Williams, J. Edmond: Appl. Phys. Lett., 62 (1993), p.384.

[4] R. Nipoti, F. Moscatelli, A. Scorzoni, A. Poggi, G. C. Cardinali, M. Lazar, C. Raynaud, D. Planson, M. Locatelli and J. Chante: Mat. Res. Soc. Symp. Proc. Vol. 742 (2003) p.303.

DOI: https://doi.org/10.1557/proc-742-k6.2

[5] A. Scorzoni and M. Finetti: Material Science Report, 3 no. 2 (1988).

[6] Finetti, A. Scorzoni and G. Soncin:, IEEE Electron Device Letters, EDL-5, no. 12 (1984), p.524.

[7] B. Schuldt, Solid-State Electronics, 21 (1978), p.715.

[8] F. Moscatelli , A. Scorzoni, A. Poggi , G. C. Cardinali and R. Nipoti: Semicond. Sci. Technol. 18 (2003), p.554.

[9] F. Moscatelli, A. Scorzoni, A. Poggi, G. C. Cardinali and R. Nipoti: Material Science Forum vol. 433-436 2003, p.673.

DOI: https://doi.org/10.4028/www.scientific.net/msf.433-436.673

[10] Sang-Kwon Lee: Ph. D thesis, Royal Institute of Technology, Stockholm, Sweden, (2002).

[11] A. Y. C. Yu: Solid-State Electronics, vol. 13 (1970), p.239.

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