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Paper Titles
Effects of Thermal Treatments on the Structural and Electrical Properties of Ni/Ti Bilayers Schottky Contacts on 6H-SiC
p.865
Electrical Characterization of Inhomogeneous Ni2/Si/SiC Schottky Contacts
p.869
Study of TiW/Au Thin Films Metallization Stack for High Temperature and Harsh Environment Devices on 6H Silicon Carbide
p.873
High Temperature and High Power Stability Investigation of Al-Based Ohmic Contacts to p-Type 4H-SiC
p.877
Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC
p.881
Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation
p.885
Structural Defects Formed in Al-Implanted and Annealed 4H-SiC
p.889
Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
p.893
Effect of Implantation Temperature on Redistribution of Al in SiC during Annealing
p.897

Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

881-884

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.881

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Online since:

June 2004

Authors:

Andrea Scorzoni, Francesco Moscatelli, Antonella Poggi, G.C. Cardinali, Roberta Nipoti

Keywords:

Al/Ti Contacts, Contact Resistivity, p-Type SiC, Schottky Barrier Height SBH

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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