High Temperature and High Power Stability Investigation of Al-Based Ohmic Contacts to p-Type 4H-SiC

Roumen Kakanakov; L. Kasamakova-Kolaklieva; N. Hristeva; G. Lepoeva; J.B. Gomes; Iva Avramova; Ts. Marinova

doi:10.4028/www.scientific.net/MSF.457-460.877

Paper Titles

Schottky-Ohmic Transition in Nickel Silicide/SiC-4H System: the Effect of Non Uniform Schottky Barrier
p.861

Effects of Thermal Treatments on the Structural and Electrical Properties of Ni/Ti Bilayers Schottky Contacts on 6H-SiC
p.865

Electrical Characterization of Inhomogeneous Ni₂/Si/SiC Schottky Contacts
p.869

Study of TiW/Au Thin Films Metallization Stack for High Temperature and Harsh Environment Devices on 6H Silicon Carbide
p.873

High Temperature and High Power Stability Investigation of Al-Based Ohmic Contacts to p-Type 4H-SiC
p.877

Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC
p.881

Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation
p.885

Structural Defects Formed in Al-Implanted and Annealed 4H-SiC
p.889

Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
p.893

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High Temperature and High Power Stability Investigation of Al-Based Ohmic Contacts to p-Type 4H-SiC

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

877-880

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.877

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Online since:

June 2004

Authors:

Roumen Kakanakov, L. Kasamakova-Kolaklieva, N. Hristeva, G. Lepoeva, J.B. Gomes, Iva Avramova, Ts. Marinova

Keywords:

Ohmic Contact, Power Device, p-Type 4H-SiC, Thermal Stability, X-Ray Photoelectron Spectroscopy (XPS)

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