[1]
L. Porter, R.F. Davis, Mat. Sci. Eng. B 34, 83 (1995).
Google Scholar
[2]
La Via, F. Roccaforte, A. Makhtari, V. Raineri, P. Musumeci, L. Calcagno, Microelectronic Engineering Vol. 60 (2002), p.269.
DOI: 10.1016/s0167-9317(01)00604-9
Google Scholar
[3]
K.J. Schoen, J.M. Woodall, J.A. Cooper, M.R. Melloch, IEEE Trans. on Electron Devices, Vol. 45 (1998), p.1595.
DOI: 10.1109/16.701494
Google Scholar
[4]
D. Defives, O. Noblanc, C. Dua, C. Brylinski, M. Barthula, V. Aubry-Fortuna, F. Meyer, IEEE Trans. Electron Devices Vol. 46 (1999), p.449.
DOI: 10.1109/16.748861
Google Scholar
[5]
V. Saxena, J.N. Su, A.J. Steckl, IEEE Trans. Electron Devices Vol. 46 (1999), 456.
Google Scholar
[6]
K.J. Schoen, J.P. Henning, J.M. Woodall, J.A. Cooper, M.R. Melloch, IEEE Electron Device Lett. Vol. 19 (1998), p.97.
DOI: 10.1109/55.663526
Google Scholar
[7]
K.V. Vassilevski, A.B. Horsfall, C.M. Johnson, N.G. Wright, A.G. O'Neil, IEEE Trans. on Electron Devices Vol. 49 (2002), p.947.
Google Scholar
[8]
F. Roccaforte, F. La Via, A. La Magna, S. Di Franco, V. Raineri, IEEE Trans. Electron Devices, Vol 50 (2003), p.1741.
DOI: 10.1109/ted.2003.815127
Google Scholar
[9]
B.J. Baliga, Modern Power Devices, John Wiley & Sons edt., (1987).
Google Scholar
[10]
L.W. Cheng, S.L. Cheng, L.J. Cheng, H.C. Chien, H.L. Lee, F.M. Pan, J. Vac. Sci. Techn. A Vol. 18 (2000), p.1176.
Google Scholar
[11]
Y.W. Ok, C.J. Choi, T.Y. Seong, J. Electr. Soc. Vol. 150 (2003), G385.
Google Scholar
[12]
F. Roccaforte, F. La Via, V. Raineri, L. Calcagno, P. Musumeci, Appl. Surf. Sci. Vol 184, (2001) p.295.
Google Scholar
[13]
E.H. Rhoderick, R.H. Williams, Metal-Semiconductor contacts, Oxford Science Publications, Oxford, (1988).
Google Scholar