In-Situ Investigation of Carbon Reduction at Ni/4H-SiC Interface Using a Silicon Interlayer

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

849-852

DOI:

10.4028/www.scientific.net/MSF.457-460.849

Citation:

W.Y. Lee et al., "In-Situ Investigation of Carbon Reduction at Ni/4H-SiC Interface Using a Silicon Interlayer", Materials Science Forum, Vols. 457-460, pp. 849-852, 2004

Online since:

June 2004

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[7] E. H. Rhoderick and R. H. Williams: Metal Semiconductor Contacts (Claredon, Oxford 1988). * Corresponding author email address: eeleew@swansea. ac. uk 0 500 1000 400 600 800 1000 1200 60Å 40Å 20Å Without Si interlayer Annealed Temperature (o C) Free C intensity Interface free C comparison.

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