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Comparison of Different Surface Pre-Treatments to n-Type 4H-SiC and their Effect on the Specific Contact Resistance of Ni Ohmic Contacts
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Structural Characterization of Alloyed Al/Ti and Ti Contacts on SiC
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Improved AlNi Ohmic Contacts to p-Type SiC
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Electrical Characterization of Deposited and Oxidized Ta₂Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures
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In-Situ Investigation of Carbon Reduction at Ni/4H-SiC Interface Using a Silicon Interlayer
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The Formation of Low Resistance Ohmic Contacts to 4H-SiC, Circumventing the Need for Post Annealing, Studied by Specific Contact Resistance Measurements and X-Ray Photoelectron Spectroscopy
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The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC
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Schottky-Ohmic Transition in Nickel Silicide/SiC-4H System: the Effect of Non Uniform Schottky Barrier
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Effects of Thermal Treatments on the Structural and Electrical Properties of Ni/Ti Bilayers Schottky Contacts on 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460In-Situ Investigation of Carbon Reduction at...

In-Situ Investigation of Carbon Reduction at Ni/4H-SiC Interface Using a Silicon Interlayer

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

849-852

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.849

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Online since:

June 2004

Authors:

W.Y. Lee, K.S. Teng, S.P. Wilks

Keywords:

4H-SiC, Low Energy Electron Diffraction (LEED), Nickel Ni, Ni-SiC, Ni-Silicide, Ni-Si-SiC, Silicon, X-Ray Photoelectron Spectroscopy (XPS)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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