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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460The Formation of Low Resistance Ohmic Contacts to...

The Formation of Low Resistance Ohmic Contacts to 4H-SiC, Circumventing the Need for Post Annealing, Studied by Specific Contact Resistance Measurements and X-Ray Photoelectron Spectroscopy

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

853-856

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.853

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Online since:

June 2004

Authors:

Owen James Guy, G. Pope, I. Blackwood, K.S. Teng, W.Y. Lee, S.P. Wilks, Philip Andrew Mawby

Keywords:

Contact, Nickel Ni, Ohmic Contact, Silicide, Silicon Carbide (SiC), X-Ray Photoelectron Spectroscopy (XPS)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] J. Wan, M.A. Capano and M.R. Melloch: Solid-State Electronics, Vol. 46, Issue 8, (2002), p.1227.

[2] G.S. Marlow and M.B. Das: Solid State Electron. Vol. 25 (1982), p.91.

[3] S.Y. Han and J.L. Lee: Journal of the Electrochemical Society, Vol. 149 (3) (2002), p. G189.

[4] A. Kestle, S.P. Wilks, P.R. Dunstan, M. Pritchard, G. Pope, A. Koh and P.A. Mawby: Materials Science Forum Vols. 338-342 (2000), p.1025 (ICSCRM 1999).

DOI: 10.4028/www.scientific.net/msf.338-342.1025

[5] P.H. Holloway, T.J. Kim, T.T. Trexler, S. Miller and J.J. Fijol: Proc. ISCSI-2 (1996), p.362.

[6] L.D. Madsen, E.B. Svedburg and H.H. Radomson: Material Science Forum Vol. 264-268 (1998), p.799.