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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Schottky-Ohmic Transition in Nickel...

Schottky-Ohmic Transition in Nickel Silicide/SiC-4H System: the Effect of Non Uniform Schottky Barrier

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

861-864

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.861

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Online since:

June 2004

Authors:

Francesco La Via, Fabrizio Roccaforte, Vito Raineri, Marco Mauceri, Alfonso Ruggiero, Paolo Musumeci, Lucia Calcagno

Keywords:

Electrical Characterization, Nickel Silicide, Ohmic Contact, Schottky

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] J.N. Su and A.J. Steckl, Inst. Phys. Conf. Ser. Vol. 142 (1996) p.697.

[2] L.M. Porter, R.F. Davis: Material Science and Engineering B Vol. 34 (1995) p.83.

[3] .

[3] F. Roccaforte, F. La Via, V. Raineri, L. Calcagno, P. Musumeci, G.G. Condorelli, Appl. Phys. A, Vol 77 (2003), p.827.

[4] F. La Via, F. Roccaforte, A. Makhatari, V. Raineri, P. Musumeci and L. Calcagno, Micoelectronic Engineering, Vol. 60 (2002), p.269.

[5] C.S. Pai, C.M. Hanson and S.S. Lau, J. Appl. Phys. Vol. 57 (1985), p.618.

[6] I. Ohdomari, S. Sha, H. Aochi, T. Chikyow and S. Suzuki, J. Appl. Phys. Vol. 62 (1987) p.3747.

[7] L.D. Madsen, E.B. Svedberg, H.H. Radamson, C. Hallin, B. Hjorvarsson, C. Cabral, J.L. Jordan-Sweet and C. Lavoie, Material Science Forum, Vol. 264-268 (1998), p.799.

DOI: 10.4028/www.scientific.net/msf.264-268.799

[8] S.Y. Han, K.H. Kim, J.K. Kim, H.W. Jang, K.H. Lee, N.K. Kim, E.D. Kim and J.L. Lee, Appl. Phys. Lett. Vol. 79 (2001) p.1816.

[9] S.Y. Han and J.L. Lee, J. of Electroch. Soc. Vol. 149, (2002) p. G189.

[10] L. Calcagno, E. Zanetti, F. La Via, F. Roccaforte, V. Raineri, S. Libertino, F. Giannazzo, M. Mauceri and P. Musumeci, Material Science Forum, Vol. 433-436 (2002), p.721.

DOI: 10.4028/www.scientific.net/msf.433-436.721

[11] F. La Via, F. Roccaforte, V. Raineri, M. Mauceri, A. Ruggiero, P. Musumeci, L. Calcagno, A. Castaldini, A. Cavallini, Microelectronic Engineering, in press.

DOI: 10.1016/s0167-9317(03)00464-7