Electrical Characterization of Deposited and Oxidized Ta2Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures

Amador Pérez-Tomás; Dominique Tournier; Josep Montserrat; Narcis Mestres; F. Sandiumenge; José Millan

doi:10.4028/www.scientific.net/MSF.457-460.845

Paper Titles

Improvement of SiC Wafer Warp by Annealing
p.829

Comparison of Different Surface Pre-Treatments to n-Type 4H-SiC and their Effect on the Specific Contact Resistance of Ni Ohmic Contacts
p.833

Structural Characterization of Alloyed Al/Ti and Ti Contacts on SiC
p.837

Improved AlNi Ohmic Contacts to p-Type SiC
p.841

Electrical Characterization of Deposited and Oxidized Ta₂Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures
p.845

In-Situ Investigation of Carbon Reduction at Ni/4H-SiC Interface Using a Silicon Interlayer
p.849

The Formation of Low Resistance Ohmic Contacts to 4H-SiC, Circumventing the Need for Post Annealing, Studied by Specific Contact Resistance Measurements and X-Ray Photoelectron Spectroscopy
p.853

The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC
p.857

Schottky-Ohmic Transition in Nickel Silicide/SiC-4H System: the Effect of Non Uniform Schottky Barrier
p.861

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Electrical Characterization of Deposited and Oxidized Ta₂Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures

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Materials Science Forum (Volumes 457-460)

Pages:

845-848

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.845

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Online since:

June 2004

Authors:

Amador Pérez-Tomás, Dominique Tournier, Josep Montserrat, Narcis Mestres, F. Sandiumenge, José Millan

Keywords:

High-k Dielectrics, Interface States (or Traps), Leakage Current, MIS, Silicon Carbide (SiC), Thin Ta₂O₅ films

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