Materials Science Forum Vols. 457-460

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https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Table of Contents

Paper Title Page

Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances

Authors: H. McD. Hobgood, M.F. Brady, M.R. Calus, Jason R. Jenny, R.T. Leonard, D.P. Malta, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, R.C. Glass, Calvin H. Carter Jr.

Committees

Preface

SiC Crystal Growth by HTCVD

Authors: Alexsandre Ellison, Björn Magnusson, Björn Sundqvist, G.R. Pozina, Peder Bergman, Erik Janzén, A. Vehanen

Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors

Authors: Chris G. Van de Walle

Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors

Authors: Hiromichi Ohashi

High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment

Authors: Shin Ichi Nishizawa, Tomohisa Kato, Yasuo Kitou, Naoki Oyanagi, Fusao Hirose, Hirotaka Yamaguchi, Wook Bahng, Kazuo Arai

Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices

Authors: Jason R. Jenny, D.P. Malta, M.R. Calus, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, H. McD. Hobgood, R.C. Glass, Calvin H. Carter Jr.

Large Diameter 4H-SiC Substrates for Commercial Power Applications

Authors: Adrian R. Powell, R.T. Leonard, M.F. Brady, Stephan G. Müller, Valeri F. Tsvetkov, R. Trussell, Joseph J. Sumakeris, H. McD. Hobgood, Albert A. Burk, R.C. Glass, Calvin H. Carter Jr.

Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique

Authors: Taro Nishiguchi, Mitsutaka Nakamura, Toshiyuki Isshiki, Satoru Ohshima, Shigehiro Nishino