Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors

Abstract:

• Periodical: Materials Science Forum (Volumes 457-460)
• Pages: 15-20
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.457-460.15
• Online since: June 2004
• Authors: Chris G. Van de Walle
• Keywords: Compensation, Doping, First-Principle Calculations, Impurity, Point Defect

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