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Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Silicon Carbide Crystal and Substrate Technology:...

Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

3-8

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.3

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Online since:

June 2004

Authors:

H. McD. Hobgood, M.F. Brady, M.R. Calus, Jason R. Jenny, R.T. Leonard, D.P. Malta, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, R.C. Glass, Calvin H. Carter Jr.

Keywords:

Crystal, Defect, Diameter, Dislocation, Micropipe, Purity, PVT, Resistivity, Seeded Sublimation, Semi-insulating (SI), Silicon Carbide (SiC), Stress, Substrate, Wafer

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] H. McD. Hobgood et al., Matls. Sci. Forum, Vols. 338-342 (2000), p.3.

[2] A. Ellison, et al., Matls. Sci. Forum, Vols. 433-436 (2003, p.33.

[3] D. Chaussende, et al., Matls. Sci. Forum, Vols. 433-436 (2003), p.25.

[4] P. G. Neudeck and J. A. Powell, IEEE Electron Dev. Lett. 15 (1994), p.63.

[5] A. R. Powell, et al., Matls. Sci. Forum, this volume.

[6] J. R. Jenny, et al., Matls. Sci. Forum, this volume.

[7] St. G. Müller, et al., Matls. Sci. & Eng., B80 (2001), p.327.

[8] S. Ha, M. Skowronski, W. M. Vetter, and M. Dudley, J. Appl. Physics, 92 (2002), p.778.

[9] I. G. Ivanov, et al., J. Appl. Phys., 80 (1996), p.3504.

[10] J. R. Jenny, et al. J. Electronic Matls., 31 (2002), p.36. Fig. 8. LTPL plot of a PVT-grown HPSI sample exhibiting a nitrogen incorporation <1E15 cm -3.