Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances
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p.3
Committees
p.4
p.4
Preface
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p.5
SiC Crystal Growth by HTCVD
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p.9
Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors
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p.15
Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors
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p.21
High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment
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p.29
Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
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p.35
Large Diameter 4H-SiC Substrates for Commercial Power Applications
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p.41
Committees
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
4-4
Online since:
June 2004
Сopyright:
© 2004 Trans Tech Publications Ltd. All Rights Reserved
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