High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

29-34

DOI:

10.4028/www.scientific.net/MSF.457-460.29

Citation:

S. I. Nishizawa et al., "High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment", Materials Science Forum, Vols. 457-460, pp. 29-34, 2004

Online since:

June 2004

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Price:

$35.00

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