Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors
p.21
p.21
High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment
p.29
p.29
Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
p.35
p.35
Large Diameter 4H-SiC Substrates for Commercial Power Applications
p.41
p.41
Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique
p.47
p.47
Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single Crystals
p.51
p.51
Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide
p.55
p.55
Thermodynamic Analysis of the Production of Silicon Carbide via Silicon Dioxide and Carbon
p.59
p.59
Faceted Growth of SiC Bulk Crystals
p.63
p.63
Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique
Abstract:
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Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
47-50
Citation:
Online since:
June 2004
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Сopyright:
© 2004 Trans Tech Publications Ltd. All Rights Reserved
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