Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single Crystals

Shao Ping Wang; Edward M. Sanchez; A. Kopec; M. Zhang; O. Hernandez

doi:10.4028/www.scientific.net/MSF.457-460.51

Paper Titles

High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment
p.29

Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
p.35

Large Diameter 4H-SiC Substrates for Commercial Power Applications
p.41

Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique
p.47

Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single Crystals
p.51

Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide
p.55

Thermodynamic Analysis of the Production of Silicon Carbide via Silicon Dioxide and Carbon
p.59

Faceted Growth of SiC Bulk Crystals
p.63

Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth
p.67

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Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single Crystals

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

51-54

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.51

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Online since:

June 2004

Authors:

Shao Ping Wang, Edward M. Sanchez, A. Kopec, M. Zhang, O. Hernandez

Keywords:

Growth, Micropipe, Polytype, PVT, Silicon Carbide (SiC)

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References

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