Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

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35-40

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J. R. Jenny et al., "Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices", Materials Science Forum, Vols. 457-460, pp. 35-40, 2004

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June 2004

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DOI: https://doi.org/10.1109/drc.1993.1009605

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DOI: https://doi.org/10.1109/iedm.2001.979517

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