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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Development of Large Diameter High-Purity...

Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

35-40

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.35

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Online since:

June 2004

Authors:

Jason R. Jenny, D.P. Malta, M.R. Calus, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, H. McD. Hobgood, R.C. Glass, Calvin H. Carter Jr.

Keywords:

4H-SiC, DLTS, EPR, Hall-Effect, High Purity Semi-Insulating (HPSI), HPSI, LTPL, OAS, PVT, Resistivity, Seeded Sublimation, SIMS, Thermal Conductivity (TC)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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