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Paper Titles
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Preface
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SiC Crystal Growth by HTCVD
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Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors
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Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors
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High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment
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Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
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Large Diameter 4H-SiC Substrates for Commercial Power Applications
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Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique
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Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

21-28

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.21

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Online since:

June 2004

Authors:

Hiromichi Ohashi

Keywords:

Output Power Density, Power Electronics, Wide Band Gap Semiconductor

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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