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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Large Diameter 4H-SiC Substrates for Commercial...

Large Diameter 4H-SiC Substrates for Commercial Power Applications

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

41-46

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.41

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Cite this paper

Online since:

June 2004

Authors:

Adrian R. Powell, R.T. Leonard, M.F. Brady, Stephan G. Müller, Valeri F. Tsvetkov, R. Trussell, Joseph J. Sumakeris, H. McD. Hobgood, Albert A. Burk, R.C. Glass, Calvin H. Carter Jr.

Keywords:

Micropipe, PVT Growth, SiC Substrates

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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DOI: 10.1109/5.90132

[2] Both Infineon and Cree Inc. have released 10A devices as of April (2003).

[3] E. Pernod, et al., Mat. Sci. Forum 389-393 (2002) 419.

[4] P. G. Neudeck, Electrical impact of SiC structural crystal defects on high electric field devices, Matls. Sci. Forum, 338-342 (2000) 1161.

DOI: 10.4028/www.scientific.net/msf.338-342.1161

[5] J.P. Bergman, H. Lendermann, P.A. Nilsson, U. Lindefelt, P. Skytt, Mat. Sci. Forum 353-356 (2001) 299.

[6] J.J. Sumakaris, et al., at this conference.