Large Diameter 4H-SiC Substrates for Commercial Power Applications

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

41-46

Citation:

A. R. Powell et al., "Large Diameter 4H-SiC Substrates for Commercial Power Applications", Materials Science Forum, Vols. 457-460, pp. 41-46, 2004

Online since:

June 2004

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[1] R. F. Davis, G. Kelner, M. Shur, J. W. Palmour, and J. A. Edmond, Thin film deposition and microelectronic and optoelectonic device fabrication and characterization in monocrystalline alpha and beta silicon carbide, Proc. IEEE, vol. 79, pp.677-701, (1991).

DOI: https://doi.org/10.1109/5.90132

[2] Both Infineon and Cree Inc. have released 10A devices as of April (2003).

[3] E. Pernod, et al., Mat. Sci. Forum 389-393 (2002) 419.

[4] P. G. Neudeck, Electrical impact of SiC structural crystal defects on high electric field devices, Matls. Sci. Forum, 338-342 (2000) 1161.

DOI: https://doi.org/10.4028/www.scientific.net/msf.338-342.1161

[5] J.P. Bergman, H. Lendermann, P.A. Nilsson, U. Lindefelt, P. Skytt, Mat. Sci. Forum 353-356 (2001) 299.

[6] J.J. Sumakaris, et al., at this conference.

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