Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

55-58

Citation:

P. J. Wellmann et al., "Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide", Materials Science Forum, Vols. 457-460, pp. 55-58, 2004

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June 2004

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[1] P.J. Wellmann, M. Bickermann, D. Hofmann, L. Kadinski, M. Selder, T.L. Straubinger and A. Winnacker; J. Cryst. Growth Vol. 216 (2000), pp.263-272.

DOI: https://doi.org/10.1557/proc-640-h1.1

[2] S. Rohmfeld, M. Hundhausen, L. Ley, N. Schulze and G. Pensl; Mat. Sci. Forum Vol. 338342 (2000), pp.579-581.

[3] P. Wellmann, Z. Herro, M. Selder, F. Durst, R. Püsche, M. Hundhausen, L. Ley, A. Winnacker; Mat. Sci. Forum Vol. 433-436 (2003), pp.9-12.

DOI: https://doi.org/10.4028/www.scientific.net/msf.433-436.9

[4] A.V. Kulik, M.V. Bogdanov, S. Yu. Karpov, D. Kh. Ofengeim, M.S. Ramm, A.I. Zhmakin, Yu.N. Makarov; submitted to Mat. Sci. Forum (2004).