Paper Titles

Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
p.35

Large Diameter 4H-SiC Substrates for Commercial Power Applications
p.41

Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique
p.47

Study of Polytype Switching vs. Micropipes in PVT Grown SiC Single Crystals
p.51

Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide
p.55

Thermodynamic Analysis of the Production of Silicon Carbide via Silicon Dioxide and Carbon
p.59

Faceted Growth of SiC Bulk Crystals
p.63

Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth
p.67

Free Growth of 4H-SiC by Sublimation Method
p.71

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Analysis of Graphitization during Physical Vapor...

Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

55-58

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.55

Citation:

Cite this paper

Online since:

June 2004

Authors:

Peter J. Wellmann, Z.G. Herro, Sakwe Aloysius Sakwe, Pierre M. Masri, M.V. Bogdanov, S.Yu. Karpov, A.V. Kulik, M.S. Ramm, Yuri Makarov

Keywords:

Numerical Modeling, Physical Vapor Transport, Source Material, X-Ray Imaging

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] P.J. Wellmann, M. Bickermann, D. Hofmann, L. Kadinski, M. Selder, T.L. Straubinger and A. Winnacker; J. Cryst. Growth Vol. 216 (2000), pp.263-272.

DOI: 10.1016/s0022-0248(00)00372-9

[2] S. Rohmfeld, M. Hundhausen, L. Ley, N. Schulze and G. Pensl; Mat. Sci. Forum Vol. 338342 (2000), pp.579-581.

DOI: 10.4028/www.scientific.net/msf.338-342.579

[3] P. Wellmann, Z. Herro, M. Selder, F. Durst, R. Püsche, M. Hundhausen, L. Ley, A. Winnacker; Mat. Sci. Forum Vol. 433-436 (2003), pp.9-12.

DOI: 10.4028/www.scientific.net/msf.433-436.9

[4] A.V. Kulik, M.V. Bogdanov, S. Yu. Karpov, D. Kh. Ofengeim, M.S. Ramm, A.I. Zhmakin, Yu.N. Makarov; submitted to Mat. Sci. Forum (2004).