Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Paper Title Page

Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization

Authors: S.M. Bishop, Edward A. Preble, Christer Hallin, Anne Henry, L. Storasta, Henrik Jacobsson, B.P. Wagner, Z.J. Reitmeier, Erik Janzén, Robert F. Davis

221

Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation

Authors: Shinsuke Harada, Koji Nakayama, Makato Sasaki, Hiromu Shiomi

225

Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions

Authors: Hidekazu Tsuchida, Isaho Kamata, Syunsuke Izumi, Takeshi Tawara, Kunikaza Izumi

229

Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor

Authors: Ho Keun Song, Myung Yoon Um, Hoon Joo Na, Dae Hwan Kim, In Bok Song, Sang Yong Jung, Jae Kyeong Jeong, Jae Bin Lee, Hyeong Joon Kim

233

Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates

Authors: Caroline Blanc, C. Sartel, Véronique Soulière, Sandrine Juillaguet, Yves Monteil, Jean Camassel

237

Vapour-Liquid-Solid Induced Localised Growth of Heavily Al Doped 4H-SiC on Patterned Substrate

Authors: Christophe Jacquier, Gabriel Ferro, Philippe Godignon, Josep Montserrat, Olivier Dezellus, Yves Monteil

241

Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism

Authors: F. Abdoun, Christophe Jacquier, Gabriel Ferro, François Cauwet, Yves Monteil

245

Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum

Authors: Sergey Y. Davydov, N.S. Savkina, Alexander A. Lebedev, Mikael Syväjärvi, Rositza Yakimova

249

Modelling of SiC-Matrix Composite Formation by Thermal Gradient Chemical Vapour Infiltration

Authors: V.I. Kulik, A.V. Kulik, M.S. Ramm, Yuri Makarov

253

Pendeo Epitaxial Growth of 3C-SiC on Si Substrates

Authors: A. Shoji, Yoichi Okui, Taro Nishiguchi, Satoru Ohshima, Shigehiro Nishino

257